A New Threshold Voltage Model and Prediction of Property of MFIS Structure

Abstract

A new analytical model of MFIS threshold voltage is obtained, based on physics and mathematical analysis. The corresponding C-V I-V curves are presented further, by considering the relation between the voltage dropped on ferroelectric film and channel position. It is indicated from the threshold voltage model that the lower dielectric constant of ferroelectrics film and the better rectangle of hysteresis loop, the more difference of threshold voltage. Analysis of C-V curve shows that the frequency and saturation of the loop affect C-V property significantly. Analysis of I-V curve shows a moderate Vg and a high Vds benefit the separation of MFIS memory states.

ACKNOWLEDGMENTS

This work was supported by the Chinese National Natural Science Fund Project (60206005) and Shanghai Youth Technology Project (02QD14009).