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Publication Cover
Integrated Ferroelectrics
An International Journal
Volume 64, 2004 - Issue 1
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Original Articles

Comparison of Retention Characteristics of Pb(Zr,Ti)O3 (PZT) Capacitors Fabricated with Noble Metal Electrodes and Their Oxide Electrodes

SANGMIN SHIN Materials & Devices Laboratory Samsung Advanced Institute of Technology, Suwon, Korea, 440-600
,
CHOONG RAE CHO Materials & Devices Laboratory Samsung Advanced Institute of Technology, Suwon, Korea, 440-600
,
JUNE MO KOO Materials & Devices Laboratory Samsung Advanced Institute of Technology, Suwon, Korea, 440-600
,
SUK PIL KIM Materials & Devices Laboratory Samsung Advanced Institute of Technology, Suwon, Korea, 440-600
,
YOUNG-JIN CHO Materials & Devices Laboratory Samsung Advanced Institute of Technology, Suwon, Korea, 440-600
,
SUNG-HO PARK Materials & Devices Laboratory Samsung Advanced Institute of Technology, Suwon, Korea, 440-600
,
JUNG HYUN LEE Materials & Devices Laboratory Samsung Advanced Institute of Technology, Suwon, Korea, 440-600
,
YOUNGSOO PARK Materials & Devices Laboratory Samsung Advanced Institute of Technology, Suwon, Korea, 440-600
,
JUNE-KEY LEE Department of Materials Science and Engineering Chonnam National University, Kwangju, Korea, 500-757
,
JI YOUNG JO ReCOE and School of Physics Seoul National University, Seoul, Korea, 151-747
,
DONG JIK KIM ReCOE and School of Physics Seoul National University, Seoul, Korea, 151-747
,
TAE WON NOH ReCOE and School of Physics Seoul National University, Seoul, Korea, 151-747
,
JONG-GUL YOON Department of Physics University of Suwon, Kyunggi-do, Korea, 445-743
&
BO SOO KANG Materials Science and Technology Division Los Alamos National Laboratory, Los Alamos, NM, 87544
 show all
Pages 169-181 | Received 01 May 2004, Accepted 01 Aug 2004, Published online: 11 Aug 2010
 
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Abstract

We compared retention characteristics of Pb(Zr,Ti)O3 (PZT) capacitors with either noble metal electrodes or their oxide compounds. Very thin PZT films with thickness below 100 nm were deposited by metal-organic chemical vapor deposition (MOCVD) on Ir bottom electrodes, and Pt, Ir, IrO2 were covered as top electrodes thereon. The capacitors with IrO2 top electrodes had the better opposite-state retention performance than those with Pt, Ir top electrodes. Inserting IrO2 top electrode affected the alleviation of the size effect more in the aged capacitors than in the virgin capacitors. In addition, we also discuss problems of using IrO2 as a bottom electrode in our PZT capacitors.

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