Abstract
To adopt thin film transistor (TFT) type FRAM, low temperature process is necessary. SiNx has good properties and advantages as a low temperature processed buffer layer. The SiNx films were grown on the p-Si(100) substrate by the transformer coupled plasma chemical vapor deposition (TCP-CVD). By employing N2 plasma treatment, interface traps such as mobile charges and injected charges were removed, hysteresis of capacitance-voltage (C-V) curve disappeared. After N2 plasma treatment, a leakage current was decreased about 2 orders. The memory window of low temperature processed (at 550°C) metal-ferroelectric-insulator-silicon (MFIS) capacitor was as large as about 1.5 V.
ACKNOWLEDGMENTS
This work was supported by Korea Industrial Technology Foundation.