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Abstract
We have investigated the selectively nucleated lateral crystallization (SNLC) of lead zirconate titanate (PZT) thin film using a titanium seed. The titanium island seed layer was formed on Pt(200 nm)/SiO2(500 nm)/Si by radio frequency magnetron sputtering and lift-off process at room temperature. Selectively nucleated lateral crystallization happened at 570°C and a rectangular array of PZT single grains was formed after 2 hours annealing. Single-grained PZT thin film by SNLC had a comparable hysteresis property with the poly-grained PZT thin film in spite of the lower crystallization temperature. In addition, it had better leakage and fatigue properties than the poly-grained PZT thin film. Enhanced ferroelectric properties of single-grained PZT could be achieved by grain boundary location control. Also, because Titanium-seeded SNLC needs no additional annealing and etching for the seed formation, it is more advantageous than PZT-seeded SNLC.