Improvement of Dielectric and Interface Properties of CeO₂ Buffer Layer by Using the Metal Seed Layer and N₂ Plasma Treatment

Abstract

In this paper, we investigated the feasibility of cerium oxide (CeO₂) films as buffers layer of MFIS (metal ferroelectric insulator semiconductor) type capacitors. CeO₂ layer were prepared by a two-step process of a low temperature film growth and subsequent RTA (rapid thermal annealing) treatment. By applying a cerium (Ce) metal seed layer of 4 nm, unwanted SiO₂ layer generation was successfully suppressed at the interface between the buffer layer and the Si substrate. After N₂ plasma treatment, the leakage current was reduced by about 2-orders. By employing a N₂ plasma treatment, we were able to successfully obtain good properties at the interface between the buffer layer and the Si substrate.

Keywords:

• CeO₂
• RTA
• metal seed layer

ACKNOWLEDGMENTS

This work was supported by Korea Industrial Technology Foundation.