Characteristics of Ferroelectric Gate Transistor Using Nd₂Ti₂O₇/HfO₂/Si Structures

Abstract

We report the fabrication and characterization of ferroelectric-gate field-effect transistor using a Nd₂Ti₂O₇(NTO)/HfO₂/Si structure. NTO and HfO₂ films were formed by chemical solution deposition and DC magnetron sputtering method, respectively. The crystalline properties of the films were characterized by X-ray diffraction. The memory windows were in the range of 0.59 V to 1.55 V when the applied voltage varied from 2 V to 6 V. The capacitance decreased by 15% after retention time of 5000 s at ± 5 writing pulse voltages. The relationship between electrical characteristics and interfacial properties were discussed.

Keywords:

• Ferroelectric-gate field-effect transistor
• Nd₂Ti₂O₇/HfO₂/Si structure
• Interfacial properties

ACKNOWLEDGMENT

This work was supported by Korea Research Foundation Grant (KRF-2003-041-D00375).