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Integrated Ferroelectrics
An International Journal
Volume 64, 2004 - Issue 1
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Original Articles

PZT Capacitors on Top of CrTiN/TiN Double Barrier Layers

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Pages 289-295 | Received 01 May 2004, Accepted 01 Aug 2004, Published online: 11 Aug 2010
 

Abstract

In this paper we investigated the thermal stability of a novel CrTiN/TiN double barrier, compared to those of TiN and CrTiN single layer barriers. The CrTiN/TiN double layer was stable against heat treatments at higher than 700°C in oxygen ambient for 30 min. However, the double layer showed a severe Pt and Cr interdiffusion issue after crystallization annealing for PZT. We found that pre-annealing treatments prior to deposition of Pt significantly reduced the interdiffusion. In addition, we also demonstrated ferroelectric characteristics of PZT capacitors on top of Pt/CrTiN/TiO2/Si bottom electrode system for ultra-high density memory applications.

ACKNOWLEDGEMENT

This work was financially supported System I.C 2010 programs by COSAR.

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