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Abstract
It is well known that electrical properties of PZT thin films can be considerably improved through Selectively Nucleated Lateral Crystallization (SNLC) process. However, we found out that grain boundaries were formed inside the PZT seed and they extended into the laterally crystallized area. In this work, when the rosette boundary was placed to the edge of the seed periphery, we could increase the number of boundaries were formed during SNLC artificially. So, we studied the effect of these boundaries on the electrical properties of PZT thin films and discussed the origin of the boundary formation through observing the first stage of SNLC.