Thickness Dependent Characteristics in the Growth of Pb(Zr_0.4Ti_0.6)O₃ Thin Films on LaNiO₃ Electrode by MOCVD

Abstract

The Pb(Zr_0.4Ti_0.6)O₃ (PZT) thin films are grown on LaNiO₃-electrodized Si substrate by metallorganic chemical vapor deposition (MOCVD). The crystallization, microstructure, and properties of the PZT films are studied as a function of PZT thickness and deposition temperature. It is found that the crystallization and grain size of PZT films of lower thickness are less sensitive to the deposition temperature. Consequently, the raising of the deposition temperature can not improve the dielectric and ferroelectric properties much for the PZT films of lower thickness. The effect of LaNiO₃ bottom electrode on these thickness dependent characteristics of PZT is also discussed in this work.

^aPart of the material included in this paper has been presented at the 16th International Symposium on Integrated Ferroelectrics, Gyeongju, Korea (2004).

ACKNOWLEDGEMENT

The authors are grateful for the support of National Science Council of the Republic of China under contract No. NSC-92-2216-E-007-040.

Notes

^aPart of the material included in this paper has been presented at the 16th International Symposium on Integrated Ferroelectrics, Gyeongju, Korea (2004).