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Integrated Ferroelectrics
An International Journal
Volume 68, 2004 - Issue 1
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Original Articles

Switching Properties of Bi3.15Nd0.85Ti3O12 Thin Films Prepared by Metalorganic Deposition Method

WEI LI National Laboratory of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing, People's Republic of China, 210093
,
CHUNHUA SONG National Laboratory of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing, People's Republic of China, 210093
,
JUN MA National Laboratory of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing, People's Republic of China, 210093
,
YI KAN National Laboratory of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing, People's Republic of China, 210093
,
XIAOMEI LU National Laboratory of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing, People's Republic of China, 210093
&
JINSONG ZHU National Laboratory of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing, People's Republic of China, 210093
Pages 269-278 | Received 01 Apr 2004, Accepted 01 Aug 2004, Published online: 02 Sep 2010
 
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Abstract

Bi3.15Nd0.85Ti3O12 thin films were fabricated using a metalorganic decomposition method. The effect of gas environment and annealing temperature on the switching time was investigated. It was found that the switching time was not significantly affected by the annealing gas environment at 700°C, which indicates oxygen vacancies have no influence on the switching time. However, the annealing temperature has great effect on the switching time. It increases with the increase of annealing temperature below 750°C, and decreases above 750°C. Several proposals have been given to explain this phenomenon and a growth-dominated switching process is proposed in BNT thin films.

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