Growth Behavior of (Pr_2/3Ca_1/3)MnO₃ Layer and the Buffering Effect on Pb(Zr, Ti)O₃ Thin Films

Abstract

Growth behavior of (Pr_2/3Ca_1/3)MnO₃, PCMO, thin films deposited by pulsed laser deposition (PLD) process on uncoated or Pt-coated silicon substrates was investigated. Perovskite phase of PCMO thin films can be formed directly on Si-substrate only in a very narrow range of deposition parameters. Using PCMO thin films as buffer layer markedly enhances the crystallization kinetics for the subsequently grown Pb(Zr_0.52Ti_0.48)O₃ (PZT) thin films, which were prepared by metallo-organic-deposition technique. The perovskite phase of PZT films can be obtained at lower post-annealing temperature (550°C) and sustain higher heat treatment temperature (700°C) without inducing significant degradation. The presence of PCMO-buffer layer markedly suppresses the leakage currently density for the PZT films, but insignificantly alters their ferroelectric properties.

ACKNOWLEDGEMENT

The authors would like to thank the financial support from National Science Council of R. O. C. through the project NSC 92–2216-E.32–006.