Charge Retention Loss and Its Mechanism of (Bi, La)₄Ti₃O₁₂ Capacitors

Abstract

We investigated the retention properties of BLT capacitors fabricated by a chemical solution deposition with Pt electrodes. BLT capacitors showed an opposite-state retention loss much better than that of PZT capacitor. On the other hand, BLT capacitors showed a large polarization loss of the same-state retention within 1 hour baking, while the corresponding loss of PZT was negligible. The hysteresis loops after different baking time showed a negligible imprint and a large relaxation of polarization. These behaviors were explained by a high resistance against imprint and a polarization relaxation possibly due to damaged interfacial layers developed by etching process of the BLT capacitors.

Keywords:

• ferroelectric
• BLT
• retention
• imprint
• polarization relaxation

ACKNOWLEDGEMENTS

This work was financially supported by the Ministry of Science and Technology through the Creative Research Initiative program and by the System IC 2010 project.