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ABSTRACT
Tetragonal Pb(Zr0.35Ti0.65)O3 [PZT] thin films were deposited on (111) c SrRuO3//(111) SrTiO3 nd (111) c SrRuO3//(111)Pt/TiO2/SiO2/(100)Si substrates at 540°C by metalorganic chemical vapor deposition. Surface-normal-(111)-oriented PZT films with in-plane aligned (epitaxial) and in-plane-random oriented (fiber-textured) films were found to be grown on (111) c SrRuO3//(111)SrTiO3 and (111) c SrRuO3/(111) Pt/TiO2/SiO2/(100)Si substrates, respectively, by x-ray diffraction analysis. It was also confirmed by transmission electron microscope that the interface between PZT and SrRuO3 had coherently lattice matched on (111) c SrRuO3/(111)Pt/TiO2/SiO2/(100)Si substrates, and this structure was locally the same with epitaxially grown PZT//SrTiO3 interface. This suggests that the local epitaxial PZT thin films were successfully grown on SrRuO3 covered (111)Pt/TiO2/SiO2/(100)Si substrates. The remanent polarization (P r ) and the squareness of polarization-electric field (P−E) hysteresis loops defined as P r < eqid1 > P sat (P sat is a saturation polarization) were 45 μ C/cm2 and 0.92, respectively at a maximum applied electrical field of 190 kV/cm. These values were almost the same with those of epitaxially grown thin films on (111) c SrRuO3//(111)SrTiO3 substrates, P r and the squareness of P−E loops were respective 44 μ C/cm2 and 0.93 at a maximum applied electrical field of 270 kV/cm. As a result, (111)-oriented fiber-textured PZT thin films having epitaxial grade ferroelectricity were realized on polycrystalline (111)Pt/TiO2/SiO2/(100)Si substrates with conductive SrRuO3 buffer layer.