FERROELECTRIC PROPERTIES OF Pt/PbZr_0.53Ti_0.47O₃/PbO/Si (MFIS) STRUCTURES ACCORDING TO THE SUBSTRATE TEMPERATURE DURING THE PBO BUFFER LAYER DEPOSITION

ABSTRACT

PbO and PZT thin films were deposited on the p-type (100) Si substrate by the r.f. magnetron sputtering method with PbO and Pb_1.1Zr_0.53Ti_0.47O₃ targets for the application of the Metal-Ferroelectric-Insulator-Semiconductor (MFIS) structure. The MFIS structures with the PbO buffer layer show the good electric properties including a high memory window and a low leakage current density. The maximum value of the memory window is 2.0 V under the applied voltage of 9 V for the Pt/PZT (200 nm, 400°)/PbO (80 nm)/Si structures with the PbO buffer layer deposited at the substrate temperature of 300°.

Keywords:

• Pb_1.1Zr_0.53Ti_0.47O₃ thin film
• PbO buffer layer
• MFIS structure
• ferroelectric properties

ACKNOWLEDGMENTS

This work was supported by grant the Korea Basic Science Institute, Busan Branch.