INVESTIGATION OF ELECTRICAL PROPERTIES FOR (Y,Yb)MnO₃/HfO₂/Si and (Y,Yb)MnO₃/Y₂O₃/Si STRUCTURES

ABSTRACT

(Y,Yb)MnO₃/HfO₂/Si and (Y,Yb)MnO₃/Y₂O₃/Si structures were constructed using alkoxy-derived precursor solutions. HfO₂ and Y₂O₃ insulating layers crystallized on Si(100) substrates consisted of uniform grains and had smooth surfaces. The Y_0.5Yb_0.5MnO₃ films prepared on the insulating films had preferred orientation along polar c-axis. The Y_0.5Yb_0.5MnO₃ films consisted of uniform grains and had smooth surface. The leakage current density of the MFIS structures was in the range of 10⁻⁷∼10⁻⁸A/cm² at 5 V. The clockwise C-V hysteresis induced by ferroelectric polarization switching was observed in the MFIS structures and the memory windows were about 3 V.

Keywords:

• (Y,Yb)MnO3 thin film
• ferroelectric random access memory
• chemical solution deposition
• C-V characteristics
• leakage current property