FERROELECTRIC PROPERTIES OF PZT/TiO₂ STRUCTURE ACCORDING TO THE DEPOSITION CONDITION OF TiO₂ INTERLAYER

ABSTRACT

PZT thin films on the interlayer (TiO₂) and Si substrate were fabricated by the r.f. magnetron-sputtering method. As a result of the EPMA analysis, we can conclude that the TiO₂ thin film decrease Pb volatilization. TiO₂ interlayer and PZT thin film were investigated by interface analysis of Glow Discharge Spectrometer (GDS) and observed to be independent layers respectively. Interlayer (TiO₂) between PZT and Pt affected as seed layer of thin film and decreased crystallization temperature. Compared to the PZT thin films with TiO₂ interlayer without post-annealing, the films with TiO₂ interlayer annealed by RTA furnace showed prevailing ferroelectric properties.

Keywords:

• Pb_1.1Zr_0.53Ti_0.47O₃ thin film
• TiO₂ interlayer
• ferroelectric properties
• GDS

ACKNOWLEDGMENTS

This work was supported by grant the Korea Basic Science Institute, Busan Branch.