ABSTRACT
We have investigated structural and electrical properties of PbZr0.3Ti0.7O3 (PZT) thin films deposited by pulsed laser deposition methods. PZT thin films have been deposited on LaMnO3 (LMO) bottom electrodes with LaAlO3 substrates during different deposition times. High-resolution x-ray diffraction data have shown that all the PZT films and bottom electrodes are highly oriented with their c-axes normal to the substrates. The thickness of each film is determined by field-emission scanning electron microscope. We have also observed root mean square roughness of 1 to 10 Å by using atomic force microscopy mode, and local polarization distribution and retention behavior of a ferroelectric domains by using piezoelectric force microscopy mode. A PZT/LMO structure has shown good ferroelectric and retention properties as a media for the nano-storage devices.
ACKNOWLEDGMENTS
This work was supported by National R&D Project for Nano Science and Technology (Project M1-0212-29-0000) of MOST, National Research Program for the 0.1 Terabit Non-Volatile Memory Development Sponsored by Korea Ministry of Science and Technology, and a grant from Center for Applied Superconductivity Technology of then 21st Century Frontier R&D Program funded by the Ministry of Science and Technology, Republic of Korea.