EPITAXIAL GROWTH OF PLZT THIN FILM ON SrTiO₃ SUBSTRATE BY SPUTTERING METHOD

ABSTRACT

PLZT thin films were prepared on SrTiO₃ substrate by RF magnetron sputtering method. The electrical measurements were conducted on PLZT films in metal-ferroelectric-semiconductor capacitor configuration (MFS). The PLZT thin films annealed at 650°C showed well-saturated hysteresis loops with remanent polarization and coercive electric field values were 0.3 μ C/cm² and 36 KV/cm respectively. The relationship between the orientation of thin film and thermal treating condition was discussed. The PLZT thin films with a thickness of 1.5 um were epitaxially grown on SrTiO₃ substrate successfully.

Keywords:

• SrTiO₃ substrate
• PLZT thin film
• sputtering condition
• epitaxial growth

ACKNOWLEDGMENTS

The authors would like to thank for the financial supports by the National ‘863’ Program (no. 2002AA325080), ‘973’ Grant (no.2002CB6133055) of China and Shanghai AM R&D Fund (0424).