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Integrated Ferroelectrics
An International Journal
Volume 75, 2005 - Issue 1
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SECTION E: FeRAM MATERIALS AND DEVICES

ROOM TEMPERATURE IMPRINT BEHAVIOR OF THE Pb(Zr,Ti)O3 THIN FILMS

CHENGTAO YANG School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
,
SHUREN ZHANG School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
,
FUGUI CHEN School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
,
JINSONG LIU School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
&
ZHAOMING TIAN School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
Pages 181-187 | Received 17 Apr 2005, Published online: 15 Aug 2006
 
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ABSTRACT

Imprint is an important effect of the failure mechanisms in ferroelectric memory devices. After the analysis of the forming mechanism of the interface layer between the ferroelectric film and the electrode, the basic idea we employ that the imprint was induced by the different defect's distribution which existed at grain boundaries and t the interface. The difference of the defect's distribution was induced by different thickness of the interface layer. The thickness dependence of coercive voltage shift and coercive voltage change rule with time validates our assumption.

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