ABSTRACT
Reliable ferroelectric 100 nm-thick PZT capacitors for 1.6 V operating FRAM device were successfully developed using MOCVD PZT with a PbTiO3 seed layer process. PbTiO3 seed layer process improved the opposite-state retention properties of polycrystalline PZT films by enhancing the (111) texture. We demonstrated that the same sensing-margin of FRAM device was obtained regardless of PbTiO3 seed layer insertion, while the retention properties were considerably improved.
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