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Integrated Ferroelectrics
An International Journal
Volume 69, 2005 - Issue 1
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Original Articles

Ferroelectric and Piezoelectric Properties of Pb(Zr,Ti)O3 Thin Films Integrated on SOI Wafers

Y. Wang Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University , Hong Kong, China
,
Y. L. Cheng Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University , Hong Kong, China
,
W. L. Liu Shanghai Institute for Microsystem and Information Technology , Shanghai, China
,
T. Y. Lam Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University , Hong Kong, China
,
Z. T. Song Shanghai Institute for Microsystem and Information Technology , Shanghai, China
,
S. L. Feng Shanghai Institute for Microsystem and Information Technology , Shanghai, China
,
H. L. W. Chan Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University , Hong Kong, China
&
C. L. Choy Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University , Hong Kong, China
 show all
Pages 223-229 | Published online: 03 Sep 2006
 
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ABSTRACT

This paper reports on the integration and characterization of Pb(Zr,Ti)O3 (PZT) thin film on silicon-on-insulator (SOI) wafers. Two perovskite-structured oxide layers, SrTiO3 and (La,Sr)CoO3, were deposited by magnetron sputtering on the SOI to form a template and the bottom electrode. On the buffered SOI, the PZT thin film was deposited by sol-gel and spin coating techniques followed by thermal treatment for crystallization. X-ray diffraction revealed that PZT has a good quality of crystallization and a preferred orientation along the Citation[001]-direction. The electrical measurement indicates that the PZT film on SOI has good ferroelectric and piezoelectric properties. The piezoelectric coefficient of the PZT film was found to be about 80× 10− 12 m/V.

ACKNOWLEDGEMENTS

This work was supported by the Hong Kong Research Grants Council (RGC) and the Center for Smart Materials of the Hong Kong Polytechnic University.

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