ABSTRACT
Ba(Ti0.85Sn0.15)O3 thin films were prepared on Pt/Ti/SiO2/Si wafers by Metal-Organic Decomposition process with final annealing at 700°C. After the top-electrode deposition a post-annealing was performed at 300°C in high vacuum or air for 1 hour. The electrical properties of films post-annealed in air are much improved although the grain size was not affected and the XRD pattern revealed no changes in crystallinity. High resistance of several tens of MΩ for the film was obtained and Temperature Coefficient of Dielectric Constant, an important figure-of-merit for the dielectric bolometer, is much improved to reach values higher than 4%/K at 25°C. Especially, Temperature Coefficient of Dielectric Constant became 11%/K at 20°C which is the highest value among bolometer materials.