Electrical Properties of BST Thin Films Fabricated by a Modified Sol—Gel Processing

ABSTRACT

A modified Sol-Gel process was used to get the higher-performance BST thin films. The BST thin films possessed different composites and structures in the substrate of Pt/Ti/SiO₂/Si. The microstructure, morphology and the electrical properties of the prepared BST thin films were investigated via X-ray diffractometry, scanning electron microscopy techniques and measurement techniques. The results show that the optimum processing for BST films is RTA750°C × 20 min and with sandwich structure seed layers. BST20 film with good resistivity, comparatively dielectric and ferroelectric properties is practical for the detecting materials of UFPA. The system with dielectric constant of 405, loss tangent of 0.011, remanent polarization of 2.3 μC cm⁻², a coercive field of 45 kV cm⁻¹ can be obtained by the modified Sol-Gel processing.

Keywords:

• Modified Sol-Gel processing
• BST thin films
• electrical properties

ACKNOWLEDGEMENTS

This research was supported by the Major State Basic Research Development Program of China (973 program) No. 2004CB619300, the National Natural Science Foundation of China under Award No. 90201028, and high-tech National Research and Development of High-tech Foundation under Award No. 2002AA325080.