ABSTRACT
Barium tin titanate Ba(SnxTi1−x)O3 (BTS, x = 0.05,0.1,0.15,0.2,0.25) thin films have been prepared by sol-gel technique on Pt/Ti/SiO2/Si substrates. The influences of Sn content on the evolution of the phase and microstructure of the thin films were examined. Dielectric properties of the thin films were investigated as a function of frequency and direct current electric field. The result shows that the Sn content strongly influences the microstructure and the dielectric properties of the films. This work clearly reveals the highly promising potential of BTS films for application in tunable microwave devices.
ACKNOWLEDGMENTS
This research was supported by the Ministry of Sciences and Technology of China through 973-project under grant 2002CB613304, Shanghai Nano Fundamental Committee under Contract No. 05nm05028, and Program for New Century Excellent Talents in University (NCET).