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Integrated Ferroelectrics
An International Journal
Volume 85, 2006 - Issue 1
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SECTION C: FeRAM MATERIALS: MATERIALS CHARACTERIZATION

FIELD-DEPENDENT FERROELECTRIC PROPERTIES OF BLT THIN FILMS UNDER DIFFERENT STRESS

XIUMEI WU National Laboratory of Solid State Microstructures, Physics Department, Nanjing University, People's, Nanjing, 210093, Republic of China
,
FENGZHEN HUANG National Laboratory of Solid State Microstructures, Physics Department, Nanjing University, People's, Nanjing, 210093, Republic of China
,
XIAOMEI LU National Laboratory of Solid State Microstructures, Physics Department, Nanjing University, People's, Nanjing, 210093, Republic of China
,
XU WANG National Laboratory of Solid State Microstructures, Physics Department, Nanjing University, People's, Nanjing, 210093, Republic of China
,
YI KAN National Laboratory of Solid State Microstructures, Physics Department, Nanjing University, People's, Nanjing, 210093, Republic of China
,
JUN MA National Laboratory of Solid State Microstructures, Physics Department, Nanjing University, People's, Nanjing, 210093, Republic of China
,
WEI CAI National Laboratory of Solid State Microstructures, Physics Department, Nanjing University, People's, Nanjing, 210093, Republic of China
&
JINSONG ZHU National Laboratory of Solid State Microstructures, Physics Department, Nanjing University, People's, Nanjing, 210093, Republic of China
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Pages 175-180 | Received 31 May 2006, Published online: 14 Feb 2007
 
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ABSTRACT

The field-dependent ferroelectric properties of Bi3.25La0.75Ti3O12 thin films under different stress were studied. It was found that, when the voltage increased from 3 V to 16 V, the remnant polarization and the coercive field increased for the films either under stress or not. Under both compressive and tensile stress, the above tendency of the remnant polarization and the coercive field got enhanced. It was also found that, the fatigue properties of films deteriorated with the measured voltage decreasing. The pinning of the domain walls and the coarsening of the domains induced by stress were used to discuss the above results.

ACKNOWLEDGMENTS

This work was supported by the National Science Foundation of China (Nos. 90207027, 90401014, 10021001, 10574066), the 973 Project of MOST (2002CB613303) of China, Jiangsu Natural Science Foundation (No. BK2004084), and NJU test foundation.

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