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ABSTRACT
(65-35) PMN-PT films of near MPB composition were deposited on Pt/Ti/SiO2/Si substrates by MOCVD using ultrasonic nebulization and ferroelectric and piezoelectric properties were investigated. The content of pyrochlore phase in the PMN-PT films was abruptly decreased after RTA treatment. Perovskite phase in the PMN-PT films decreased with the increase of deposition temperature and nearly perovskite single phase film could be obtained using Mg content of 0.59 mol/l in the source solution at 350°C. Perovskite PMN-PT films showed typical butterfly type curves in C-V characteristics at room temperature and had the relative dielectric constant of about 680. The d33-coefficient of PMN-PT film was 20.49 pC · N−1.