ABSTRACT
Ba0.65Sr0.35(Ti0.95Sn0.05)O3 (BSTS) ferroelectric thin films are prepared by means of the sol–gel method on the Pt/Ti/SiO2/Si substrate. The results of the atomic force microscopy and X-ray diffraction analysis indicate that the grain sizes of BST thin films does not cause the change with the doped Sn. Compared with Ba0.65Sr0.35TiO3 (BST) thin films, BSTS thin films possess a lower dielectric constant and loss tangent, which is propitious to the improvement of the figures of merits of pyroelectric materials. The polarization at E = 0 and the field at P = 0 of BSTS thin films are 1.35 μ C/cm2 and 12.89 kV/cm, respectively.