ABSTRACT
In this report, plasma-enhanced atomic layer deposition (PEALD) technique was used to deposit dielectric Ga2O3 thin films at various temperatures (50, 150, and 250°C) on p-type Si (100) and quartz substrates with an alternating supply of reactant source, [(CH3)2GaNH2]3, and oxygen plasma of 150 W. The growth temperature dependences of the Ga2O3 thin films were investigated. An atomic force microscope and an X-ray diffractometer were used to investigate the surface morphologies and the structural properties of the thin films. The electrical properties of Pt/Ga2O3/Si structured thin film were investigated by using a semiconductor parameter analyzer. A spectrophotometer was used to measure the transmittances of the thin films, and the band gap energies of the thin films were calculated.
ACKNOWLEDGMENTS
This work was supported by Korea Research Foundation Grant funded by the Korea Government (KRF-2006-311-D00138). This work was also partially supported by Electronic Ceramics Center at DongEui University as an RIC program of ITEP under MOCIE and Busan Metropolitan City.