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Integrated Ferroelectrics
An International Journal
Volume 95, 2007 - Issue 1
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SESSION F: MEMS, NEMS, PURPELECTRIC/IR, OPTOELECTRONIC MATERIALS

EFFECTS OF RAPID THERMAL ANNEALING ON MICROSTRUCTURES AND PROPERTIES OF PZT-PT/TI STACKS FOR MEMS APPLICATION

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Pages 3-16 | Received 15 Jun 2007, Accepted 30 Sep 2007, Published online: 20 Sep 2010
 

ABSTRACT

The effects of rapid thermal annealing (RTA) on microstructures, properties, and residual stress of Pt/Ti electrodes and sol-gel derived lead zirconate titanate (PZT) films were investigated. It was found that when heating rate was 3.5°C/s, the Pt/Ti electrode conglomerated to form a typical hillock surface morphology, companied by remarkable degradations in both surface roughness and electric conductivity. When using 10.5°C/s as the heating rate, the Pt/Ti conglomeration and degradation can be effectively retarded. Accordingly, the PZT film exhibited different properties at various RTA conditions. Furthermore, Ti diffusion was found mainly happened in a short period after heat-treatment started.

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