ABSTRACT
Thin films with the composition of SrBi4Ti4O15(SBTi) and SrBi4−0.1Pr0.1Ti4O15 (SBPTi) have been prepared on Pt/TiO2/SiO2/Si substrates by sol-gel method structure characterization of the SBT and SBPT thin films was revealed by x-ray diffraction (XRD). Using Pt/SBPT/Pt/TiO2/SiO2/Si configuration, ferroelectric properties of the film were well established with the hysteresis loop. A notable enlargement of remnant polarization (2Pr) and a decrease of the coercive field (Ec) are observed. The 2Pr of SBPTi reaches a value as large as34.76 μC/cm2, nearly twice greater than that of SrBi4Ti4O15 without Pr-doping. The SBPTi film shows little change of Pns and −Pns up to 1010 switching cycles, suggesting an excellent fatigue-endurance characteristic.
ACKNOWLEDGMENT
This work was supported by the financial support from the National Natural Science Foundation of China (Grant No. 10274066)