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Integrated Ferroelectrics
An International Journal
Volume 95, 2007 - Issue 1
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SESSION F: MEMS, NEMS, PURPELECTRIC/IR, OPTOELECTRONIC MATERIALS

INFLUENCE OF DEPOSITION TEMPERATURE AND N2 FLOW RATE ON HIGH QUALITY ZNO THIN FILM DEPOSITED ON SiO2/SI SUBSTRATE BY ULTRASONIC SPRAY PYROLYSIS

YUAN WEN State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P.R., China
,
CHENGTAO YANG State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P.R., China
,
SONGTAO JIANG State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P.R., China
&
SHUREN ZHANG State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P.R., China
Pages 66-73 | Received 15 Jun 2007, Accepted 30 Sep 2007, Published online: 20 Sep 2010
 
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ABSTRACT

ZnO thin films were prepared on SiO2/Si substrate by ultrasonic spray pyrolysis (USP) method using the aqueous solution of zinc acetate dehydrate. X-ray diffraction (XRD) and atomic force microscopy (AFM) were employed to analyze the crystalline and microscopic structure of the films. The properties of ZnO films were investigated with respect to deposition temperature (Ts) and N2 flow rate (f). The results show that ZnO thin films exhibit hexagonal wurtzite structure and the highly preferential orientation along c-axis under Ts = 320°C and f = 5 L/min deposition condition.

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