FERROELECTRICS SEMICONDUCTORS THIN FILMS SWITCHING PROPERTIES: A TIME DEPENDENT LANDAU DEVONSHIRE APPROACH

ABSTRACT

Physical models which describe transient states are very interesting from the view point of examining the possibility of constructing the ferroelectric non destructive readout memory. Theoretically the kinetics of switching in bulk and films have often been studied by using models derived from the Kolmogorov Avrami theory. Because some important aspects of thin films are not possible to take into account within this framework, we have adopted another approach based of a time-dependent Landau-Devonshire model. The present work is devoted to investigating the influence of the space charges on the switching.

keywords:

• Ferroelectric thin films
• space charges field
• switching