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ABSTRACT
Bi-rich BiFeO3 films were fabricated by chemical solution deposition followed by a post-deposition annealing at 823 K in air. Not only the polycrystalline BiFeO3 phase but also the bismuth oxide phases were formed at high excess Bi contents. This suggested that the Bi atoms were not significantly evaporated. The remanent polarization decreased as the excess Bi contents increased at 90 K, though the remanent polarization of 33 μ C/cm2 was still obtained at the excess Bi contents of 30 at.%. The magnetization monotonically decreased as the excess Bi content increased. It could be considered that the optimal Bi content is the stoichiometric value of BiFeO3 in the preparing way of the CSD followed by the annealing at 823 K.
AKNOWLEDGMENT
We wish to express gratitude to Prof. Nobuyuki Hiratsuka for the magnetic measurements using VSM. We also wish to express gratitude to Prof. Hiroshi Funakubo, Tokyo Institute of Technology for the ferroelectric measurements using the FCE-1A type ferroelectric tester produced by TOYO Corporation. The authors would like to thank Dr. Takashi Ijima, National Institute of Advanced Industrial Science and Technology for observing the cross-sectional SEM image. This study was partly supported by the Grant-in-Aid for Young Scientist [Start up program] (Grant No. 18860070) from the Ministry of Education, Culture, Sports, Science and Technology of Japan and by the Sasakawa Scientific Research Grant from The Japan Society (Grant No. 19-216).