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ABSTRACT
Microwave slot and coplanar transmission lines formed on a surface of ferroelectric films grown on dielectric substrates are used for various microwave devices with electrically tunable amplitude and phase frequency characteristics. The electric field intensity, which is required for the effective modulation of dielectric permittivity of the ferroelectric film is varied between 10 and 15 V/micron. Therefore rather narrow gaps with width no more than 10 microns can provide necessary electric field at bias voltage no more than 100 V. In this case the attenuation of the electromagnetic slot mode is considerably increased, so the implementation of such devices has no a sense.
ACKNOWLEDGMENT
This work was partly supported by the project # 2896 of the International science and technology center (ISTC) and Korea Institute of Science and technology (KIST) fund. The authors are also grateful to Russia-LG Electronics research center in Saint-Petersburg and its director Dr. V.G. Chernenko for a possibility to implement the microwave simulations with their original software package.