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ABSTRACT
The first cooling process after PbTiO3 (PT) film deposition is most important for linking domain formation to ferroelectric properties. However, there are few reports for first domain formation during the first cooling after deposition. Raman spectroscopy was applied for the “in-situ” monitoring of the first cooling process of PT film prepared by metal organic vapor deposition. The processes of strain accumulation and relaxation during the cooling are revealed for the first time. The misfit strain was released after PT deposition above the Curie temperature. The thermal strain caused by the difference in thermal expiation between the PT film and substrate was also released around the Curie temperature, and it was suddenly accumulated again with domain formation. These results have provided the origin of domain formation and a way to control the domain formation in PT film.