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Integrated Ferroelectrics
An International Journal
Volume 101, 2008 - Issue 1
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Original Articles

DIELECTRIC AND PHASE TRANSITION PROPERTIES OF GD DOPED PbZr0.53Ti0.47O3

, , , , &
Pages 70-79 | Received 20 Feb 2007, Accepted 27 Feb 2007, Published online: 20 Sep 2010
 

ABSTRACT

PbZr0.53Ti0.47O3 (PZT53/47) doped with 0.6% wt. Gd2O3 was synthesized following the solid state reaction technique. X-ray diffraction indicated a rhombohedral structure. The grain size distribution was centered at 3 μ m with grains as big as 6 μ m. Dielectric studies in the 100 Hz to 1 MHz and the 25 to 450°C frequency and temperature ranges, yielded values above 40,000 for the relative permittivity. The transition temperature decreased from 386°C for the undoped ceramic to 352°C. Hysteresis loops were taken at 23°C and applied electric fields up to 17 kV/cm. The radial electromechanical coupling-factor was 0.12.

ACKNOWLEDGMENTS

This work was partially supported by DGAPA-UNAM Proj. Nos. IN102908, IN114207 and IN109608, and CoNaCyT Proj. No. 82503 and 49986-F. Thanks are due to V. García, I. Gradilla, P. Casillas, E. Aparicio and J. Fuentes for their technical assistance.

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