ABSTRACT
SrBi5FeTi4O18 (SBFT) thin films were prepared on a Pt(111)/Ti/SiO2/Si(100) substrate using a chemical solution deposition method and annealed at 650°C under oxygen atmosphere. It was found that the polycrystalline SBFT thin film exhibits good ferroelectric properties. The values of remnant polarization (2P r ) and coercive electric field (2E c ) were 33 μ C/cm2 and 150 kV/cm at an applied electric field of 250 kV/cm, respectively. Leakage current density of the thin film was 106 A/cm2 at 100 kV/cm. The values of dielectric constant and dielectric loss were 470 and 0.05 at 1 kHz, respectively. No significant polarization fatigue was observed up to 1.44 × 1010 switching cycles. Also weak ferromagnetic properties were observed.
ACKNOWLEDGMENTS
This work was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD) (KRF-2007-412-J00901). AB acknowledges the support of NSF, USA under the grant metamaterial composites.