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Integrated Ferroelectrics
An International Journal
Volume 105, 2009 - Issue 1
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Original Articles

FERROELECTRIC FIELD-EFFECT TRANSISTOR DIFFERENTIAL AMPLIFIER CIRCUIT ANALYSIS

THOMAS A. PHILLIPS National Aeronautics and Space Administration, Marshall Space Flight Center, Huntsville, Alabama, 35812, U.S.A.
,
TODD C. MACLEOD National Aeronautics and Space Administration, Marshall Space Flight Center, Huntsville, Alabama, 35812, U.S.A.
&
FAT D. HO The University of Alabama in Huntsville, Department of Electrical and Computer Engineering, Huntsville, Alabama, 35899, U.S.A.
Pages 107-117 | Received 10 Jun 2008, Published online: 20 Sep 2010
 
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ABSTRACT

This paper investigates the use of FeFETs in a common analog circuit, the differential amplifier. The two input Metal-Oxide-Semiconductor (MOS) transistors in a general MOS differential amplifier circuit are replaced with FeFETs. Resistors are used in place of the other three MOS transistors. Because of the FeFET hysteresis, the FeFET differential amplifier has several different operating modes depending on the FeFETs' prepolarization. Experimental results of the FeFET differential amplifier operation were obtained. Comparisons were made between the FeFET differential amplifier and the standard MOS differential amplifier. The experimental results are discussed.

Presented at the International Symposium on Integrated Ferroelectrics in Singapore on June 10, 2008.

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