CURRENT-VOLTAGE CHARACTERISTICS AND PHOTOSTIMULATED CONDUCTIVITY IN FERROELECTRIC HETEROGENEOUS STRUCTURE Al/Sn₂P₂S₆/Al

ABSTRACT

The mechanisms of conductivity of ferroelectric semiconductor films Sn₂P₂S₆ and its photostimulated change are investigated. Leakage current studies on Al/Sn₂P₂S₆/Al capacitors show the asymmetry of the I-V characteristics which is ascribed to an effect of the internal electric field varying the height of potential barriers at the film interfaces. The visible light illumination increases conductivity of the films especially for the wavelength λ₀ = 520 nm corresponding to the fundamental absorption edge of Sn₂P₂S₆, although appreciable growth of the conductivity also occurs in the long-wave range due to the photoionization transitions.

Keywords:

• ferroelectric heterostructure
• I-V characteristics
• photostimulated conductivity

ACKNOWLEDGMENTS

This work was partially supported by the Ministry of Education and Science of Russian Federation (program RNP N.2.1.1.3674) and the Russian Foundation for Basic Research (project N 08-02-92006 NNS-a).