MULTI-BIT STORAGE BASED ON CHALCOGENIDE THIN FILM TRANSISTOR FOR HIGH DENSITY NONVOLATILE MEMORY APPLICATION

ABSTRACT

The multi-bit storage realization based on chalcogenide thin film transistor is put forward first here, in which the chalcogenide film acts as not only phase change material but also semiconductor layer. The channel length of thin film transistor was modified by reversible phase change between amorphous and crystalline of chalcogenide thin film adjacent to source and drain. Consequently different read-out current can be achieved to realize multi-bit storage in one single cell.

PACS:

• 71.30.+h Metal-insulator transitions and other electronic transitions
• 72.80.Jc Other crystalline inorganic semiconductors

ACKNOWLEDGMENTS

The authors would like to thank all of their collaborators. This work is supported by National Natural Science Foundation of China with the contract number 60706033, 60676007, and National Basic Research Program of China (2007CB935403).