STRUCTURAL AND ELECTRICAL PROPERTIES OF INDIUM DOPED ZNO THIN FILM ON 6H-SIC SUBSTRATE BY RF MAGNETRON SPUTTERING

ABSTRACT

We investigated the indium doping and annealing effects of ZnO thin film on a 6H-SiC substrate using RF magnetron sputtering for deposition and RTA for annealing. The structural and electrical properties of ZnO and 1 at.% indium doped ZnO thin films were measured by X-ray diffraction, AFM, SEM, TEM, and Hall effect measurement. According to this study, the 1 at.% indium doped ZnO thin film deposited at 800°C and annealed at 850°C with an oxygen to argon ratio of 9:1 showed the electron concentration of 7.25 × 10¹⁸ cm⁻³, resistivity of 0.032 Ω·cm, and mobility of 26.90 cm²/V·s and, can be a good candidate for application to LEDs.