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Integrated Ferroelectrics
An International Journal
Volume 125, 2011 - Issue 1
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Original Articles

Strain Relaxation and Dislocation Evolution in Epitaxial Perovskite Oxide Thin Films

H. Z. Zeng State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science & Technology of China, Chengdu, Sichuan, 610054, P. R. China
,
Y. Lin State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science & Technology of China, Chengdu, Sichuan, 610054, P. R. China
&
C. L. Chen Department of Physics and Astronomy, University of Texas at San Antonio, San Antonio, Texas, 78249, USA; Department of Physics and The Texas Center for Superconductivity, University of Houston, Houston, Texas, 77204, USA
Pages 73-80 | Received 30 Jun 2010, Accepted 29 Dec 2010, Published online: 27 Jun 2011
 
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Abstract

Strain relaxation behavior of perovskite epitaxial layers such as ferroelectric (Pb,Sr)TiO3 thin films on (110) NdGaO3 substrates, and SrRuO3 thin films on LaAlO3 substrates were investigated using high resolution x-ray diffraction. Lattice distortion, dislocation densities and interfacial strain distribution were systematically studied with samples under different fabrication conditions. Strain relaxation and dislocation evolution are found to be dependent upon the deposition and cooling process. Reciprocal space maps reveal different scenarios of strain relaxation behavior in (Pb,Sr)TiO3 and SrRuO3 thin films.

Acknowledgments

This work is partially supported by the National Natural Science Foundation of China (Grant No. 60976061). It is also supported by the State of Texas through the Texas Advanced Research Program under 003656-0103-2007 at UTSA and through the Texas Center for Superconductivity in the University of Houston.

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