Abstract
Cerium (Ce) doped Ba(Zr0.52Ti0.48)O3 were prepared by conventional solid state reaction method. The frequency dependence dielectric behaviors were studied from 50°C temperatures to 400°C. Dielectric properties showed the low loss (tan δ) behavior. The frequency dependent dielectric constant (ϵ′) exhibited moderate values. Impedance studies (Z′) showed superior electrical behavior within the samples.
Acknowledgements
Two of the Authors (RS and SM) acknowledge University Grants Commission (UGC) New Delhi, India, for granting RFSMS Fellowship No. F. 4-1/2006(BSR)/11-129/2009 (BSR).