Abstract
In this study, BaNb2O6 thin films were deposited on Pt/Ti/SiO2/Si substrates by MOCVD using ultrasonic nebulization and their deposition characteristics and electrical properties were investigated. The composition of thin films was controlled by changing the molar ratio of Ba/Nb source in the source solution and the deposition temperature. The BaNb2O6 single phase thin films could be prepared using a source solution with the concentration of 0.07 mol/l Ba-source and 0.105 mol/l Nb-source at the substrate temperature of 350°C. The dielectric constant of the film was about 86. The current density was 6.740 × 10−7 A/cm2 at −10 V and 1.075 × 10−6 A/cm2 at +10 V. Also, the remanent polarization was 0.302 μC/cm2 and the coercive force was 31.523 kV/cm.
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