Abstract
In this study, Ba6Ti2Nb8O30 thin films were deposited on Pt/Ti/SiO2/Si substrates by the MOCVD using ultrasonic nebulization and their deposition characteristics were investigated. Single phase Ba6Ti2Nb8O30 films could be obtained by varying the mixing ratios of the source solutions for BaTiO3 and BaNb2O6 films at the deposition temperature range of 350∼400°C. The crystallinity of Ba6Ti2Nb8O30 films was enhanced by the RTA treatment. The Ba6Ti2Nb8O30 thin films showed the dielectric constant of 53.5 (at 100 kHz). And the current density was 1.361 × 10−4 A/cm2 at +10 V, and 1.424 × 10−5 A/cm2 at −10 V. Also, the remanent polarization was 0.459 μC/cm2 and the coercive field was 36.865 kV/cm.
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