Abstract
BaTiO3 thin films were grown on (100)MgO single crystal substrates by reactive sputtering using Ba and Ti metal targets, and optimization of deposition conditions for fabricating high-quality BaTiO3 thin films were investigated. Composition of BaTiO3 thin films was controlled by the number of Ba metal pieces. As a result, the total pressure of 20 Pa and Ba/Ti target area ratio of 0.17 was optimized for fabricating stoichiometric BaTiO3 thin film. Under this condition, BaTiO3 thin film can be crystallized at 460°C. From X-ray diffraction analysis, we confirmed that the BaTiO3 thin film, which deposited under optimum conditions of deposition temperature of 460°C, total pressure of 20 Pa, and Ba/Ti target area ratio of 0.17, was epitaxially grown and had (100)/(001) single orientation. Lattice constants of the a- and c-axis were estimated to be 0.4063 and 0.4098 nm, respectively. Therefore, we concluded that it can be successful in fabricating high-quality and low damage BaTiO3 thin film deposited by reactive sputtering using a metal target at a low temperature.
Acknowledgments
This work was partly supported by a Grant-in-Aid for Scientific Research (C) (No. 22560679) from the Ministry of Education, Culture, Sports, Science and Technology, Japan.