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Integrated Ferroelectrics
An International Journal
Volume 141, 2013 - Issue 1
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Original Articles

Ag(Ta0.5Nb0.5)O3 Thick Film Based Microwave Band Pass Filters

H. Lee Department of Wireless Communications Engineering, Kwangwoon University
,
T. S. Jung Department of Wireless Communications Engineering, Kwangwoon University
,
J. C. Lee Department of Wireless Communications Engineering, Kwangwoon University
,
K. S. Lee Department of Electronic Materials Engineering, Kwangwoon University, 447-1 Wolgye-dong, Nowon-ku, Seoul, 139-701, Korea
,
M. S. Chae Department of Electronic Materials Engineering, Kwangwoon University, 447-1 Wolgye-dong, Nowon-ku, Seoul, 139-701, Korea
&
J. H. Koh Department of Electronic Materials Engineering, Kwangwoon University, 447-1 Wolgye-dong, Nowon-ku, Seoul, 139-701, Korea
Pages 64-71 | Received 30 Jun 2012, Accepted 23 Oct 2012, Published online: 09 May 2013
 
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Abstract

We report on the simulated performance of a two–layered Microstrip and Coplanar Waveguide (CPW) band-pass filters by using one layer simulation method. The two layer is composed of Ag(Ta0.5Nb0.5)O3 (ATN) thick film and alumina substrate. The ATN thick film of about 7 μm in thickness is prepared by screen printing method on an alumina substrate of about 635 μm in thickness at a sintered temperature and time of 1150°C and 2 hrs, respectively. Au conductor of about 2 μm in thickness is deposited by sputtering method. The 2-pole band-pass filters are designed for a center frequency of 5.88 GHz, and 5.76 GHz with 7.8% and 8.6% bandwidth, respectively. Both ATN-based filters offer a similar selectivity as well as a loss parameter compared to that of two-layer simulation.

Acknowledgment

This work was supported by the National Research Foundation of Korea(NRF) grant funded by the Korea government (MEST) (No. 2011-0029625)

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