Abstract
The CuInSe2 and Cu(In1-xGax)Se2 absorbing layer films are prepared by selenization after magnetron sputtering. The influence of selenization parameters, including selenized temperature and time, on microstructure of CuInSe2 thin films was studied by X-ray diffractometer (XRD), field emission scanning electron microscopy (FESEM) and energy dispersive spectroscopy (EDS). Highly crystallized CuInSe2 film could be obtained when selenized at 500°C for 40 min. By using the same selenization technique, high-quality Cu(In1-xGax)Se2 films were also successfully synthesized from two types of CuInGa precursor layers with different structure.
Acknowledgment
The present work was financially supported by the National Natural Science Foundation of China under Grant No. 51101101, “Shanghai Municipal Natural Science Foundation” under Grant No. 11ZR1424600, “Shanghai Leading Academic Discipline Project” under Grant No. J50503 sponsored by Shanghai municipal education commission in China.