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Integrated Ferroelectrics
An International Journal
Volume 151, 2014 - Issue 1: The 12th China International Nanoscience and Technology Symposium, Chengdu (2013)
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Original Articles

The Dielectric Properties for Yttrium Doped SBT Thin Films Prepared by Sol-Gel Method

Shan LianweiSchool of Materials Science and Engineering, Harbin University of Science and Technology, Harbin150040, ChinaCorrespondence[email protected]
,
Li WeiSchool of Materials Science and Engineering, Harbin University of Science and Technology, Harbin150040, China
,
Xu HuanyanSchool of Materials Science and Engineering, Harbin University of Science and Technology, Harbin150040, China
,
Han ZhidongSchool of Materials Science and Engineering, Harbin University of Science and Technology, Harbin150040, China
,
Wu ZeSchool of Materials Science and Engineering, Harbin University of Science and Technology, Harbin150040, China
,
Dong LiminSchool of Materials Science and Engineering, Harbin University of Science and Technology, Harbin150040, China
,
Fu XinghuaSchool of Materials Science and Engineering, Jinan University, Jinan250022, China
&
Hou WenpingSchool of Materials Science and Engineering, Jinan University, Jinan250022, China
 show all
Pages 14-20 | Received 11 Jun 2013, Accepted 07 Feb 2014, Published online: 14 May 2014
 
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Abstract

In this work, Sr0.5Ba0.5Ti1-zYzO3 (SBT) thin films were prepared on a Pt/SiO2/Si substrate by sol-gel process. The microstructures of SBT thin films were examined by IR, XRD and TEM. The influences of Y on the microstructure and dielectric properties of Sr0.5Ba0.5Ti1-zYzO3 thin films were studied. It is found that tetragonal perovskite crystal grains existed in SBT thin films. Increasing Y doping has a clear effect on the grain size of SBT. It is found that the proper Y doping content decreases dielectric loss for SBT thin films.

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