Dependence of the Hall Coefficient on Doping Concentration in Doped Semiconductor Superlattices with a Perpendicular Magnetic Field under the Influence of a Laser Radiation

Abstract

The dependence of the Hall coefficient on doping concentration in doped semiconductor superlattices (DSSLs) under a crossed dc electric field and magnetic field in the presence of a laser radiation, is investigated by using a quantum kinetic equation for electrons. Analytical results for the resistance and the Hall coefficient (HC) are computationally evaluated and graphically plotted for the GaAs:Si/GaAs:Be DSSL. Numerical results for the magnetoresistance are in accordance with available theories. The dependence of the HC on the doping concentration shows an oscillation whose phase is strongly affected by the laser radiation.

Keywords:

• Hall coefficient, SdH oscillation, doped superlattice, quantum kinetic equation

Funding

This research is funded by the National Foundation for Science and Technology Development of Vietnam (NAFOSTED) (Grant No.: 103.01-2011.18) and Vietnam National University (Grant No.: QGTD.12.01).